[PDF] Top 20 Performance and reliability of poly-Si TFTs on FSG buffer layer

... novel and process-compatible scheme for fabri- cating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and ...device ... See full document

... atomic layer deposition system and gettering method have been employed to reduce the amount of undesired metal ...complex and incur high ...introduction of fluorine (F) atoms can ... See full document

... (NILC- TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC ...found ... See full document

... Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 30050, Taiwan © 2007 The Electrochemical ...list of authors for this article should be Chia-Wen Chang, Chih-Kang Deng, Che-Lun ... See full document

... b National Nano Device Laboratory, Hsinchu 30010, Taiwan, R.O.C Fluorinated-silicate-glass (FSG) was combined with Ni-metal- induced lateral crystallization (NILC) polycrystalline silicon thin- film transistors ... See full document

... Lee and S. K. Joo, “Low temperature poly-Si thin-film transis- tor fabrication by metal-induced lateral crystallization,” IEEE Electron Device ...Wang, and M. Wong, “High performance ... See full document

... view of key process steps for self-aligned RSD poly-Si TFT device with ONO stack gate ...advantage of in situ doped poly-Si and poly RSD is their in- dependence ... See full document

... study on improving the electrical properties of MILC TFTs using a F + implan- tation [10], in which MILC poly-Si was subjected to the F + ...the performance and ... See full document

... issue of poly-Si TFTs is their reliability, which was examined under hot-carrier ...shift of DILC TFTs is greatly Figure 1. Schematic illustration of F+ ... See full document

... 共Poly-Si TFTs兲 have attracted much attention due to the possibility to realize the integra- tion of switching pixels and their peripheral driver circuits on a single glass ... See full document

... splits of samples were per- formed at V DS = 4.9 V and V GS at the maximum substrate ...length and width of the test devices are 0.5 and 10 ␮ m, ...function of stress ...terms ... See full document

... characteristics and huge device-to-device variations mainly due to the non-uniform grain structure and grain size across the whole glass sub- ...variation of thirty poly-Si transistors ... See full document

... Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high ... See full document

... surface on a SiO 2 -coated silicon wafer, and then used HCl solution and H 2 SO 4 + H 2 O 2 solution to do surface ...surface of silicon and therefore the electrical characteristics ... See full document

... bonds and strain bonds, thus reducing the effects of grain boundaries and channel ...damage of the channel surface increased with the dosage of F + ...DIC-14 TFTs exhibit higher ... See full document

... In order to fill the traps with enough charges to make the channel more conductive, a large operation voltage was needed for the conventional LTPS-TFTs without any defects passivation [6–8]. These defects would ... See full document

... circuit of active-ma- trix liquid crystal displays and active-matrix light emitting diodes are ...difference of driving TFTs, the unsaturated of output voltage arisen from the ... See full document

... thickness of chemical oxide layer is less than XPS sampling ...composed of SiO and SiO 2 . To investigate the effect of chemical oxide on the reduction of Ni residues, ... See full document

... voltage and mo- bility characteristics comparable to those of the control ...voltage and the subthreshold ...mobility and the minimum leakage current ...passivation of the dangling ... See full document

... Low-temperature poly-Si 共LTPS兲 thin-film transistors 共TFTs兲 have received much attention in recent years because of their in- creasing use in active matrix displays, such as active matrix ... See full document