[PDF] Top 20 On the prediction of geometry-dependent floating-body effect in SOI MOSFETs
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On the prediction of geometry-dependent floating-body effect in SOI MOSFETs
... through the perspective of body–source built-in potential lowering (1 ), the geometry-dependent floating-body effect in state-of-the-art ... See full document
3
On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs
... as the gate bias is applied. The possible region providing sufficient electrons can be attributed to the partial n + polygate area of body-tied ...cutting the T-gate structure ... See full document
3
Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs
... shown in Fig. 3. Corresponding to the I D degradation which is indepen- dent on temperature, it can be clearly observed that body current with V D = ...independent on temperature. ... See full document
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Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
... ROC The review of this paper was arranged by ...model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode ... See full document
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Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
... nm SOI CMOS technology, PD SOI n-type MOSFETs are employed the T-gate structure to investigate the GIFBE ...mechanism. The SOI wafers were fabricated using SMART-CUT ... See full document
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On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
... “Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs,” IEEE Electron Device ...overshoot in ultrathin gate oxide silicon-on-insulator ... See full document
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On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
... (PD) SOI MOSFETs, however, (1)–(3) may not be valid due to the existence of the floating body re- ...gion. In this work, we investigate the RF extrinsic ... See full document
3
Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation
... investigates the impact of mechanical strain on gate-induced floating-body effect in partially depleted silicon-on-insulator p-channel metal–oxide–semiconductor ... See full document
3
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
... dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on- insulator (SOI) MOSFETs has been experimentally examined in this ...With the ... See full document
6
Investigation of Random Telegraph Signal with PD SOI MOSFETs
... Motivation The noise stability issues have become much more complicated and compatible with device operation signal when device scale down to deep ...With the aggressive scaling of device size, drain ... See full document
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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors
... firming the validity of EVB-induced GIFBE for ...Therefore, the aim of this work is to clarify the origin of electrons on the GIFBE in PD SOI ... See full document
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Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
... that the E 0 (and, hence, Δψ s QM ) of the long-channel device is close to that of the short-channel ...to the SCE, the subthreshold swing S of the ... See full document
3
The Characteristics and Control of Body-to-Body Leakage Current in PD-SOI
... For the two stack PD-SOI devices sharing a common diffusion area, the bodies of the two devices are isolated by a common source/drain 共S/D兲 ...If the common S/D junction does not ... See full document
5
Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure
... SUPPRESSION OF THE FLOATING-BODY EFFECT IN POLY-SI THIN-FILM TRANSISTORS 635 ...characteristics of the conventional and the SSOB-TFTs with W=L = 50 m=5 ... See full document
3
Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
... research in SOI devices at the Univer- sity of California at ...one of the major contributors to the unified BSIMSOI model, the first industrial standard SOI ... See full document
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The Floating Kuroshio Turbine Blades Geometry Design with Consideration of the Structural Strength
... Abstract In this paper, two design procedures of the Floating Kuroshio Turbine blade geometries are ...presented. The first one is similar to the propeller design method, ... See full document
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Effect of geometry on the excitonic diamagnetic shift of nano-rings
... confined in asymmetri- cally wobbled three-dimensional InAs/GaAs nano-rings. The wobbling asymmetry reproduces realistic experimen- tal geometry of the rings and generates an asymmetry ... See full document
3
Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETs
... effective body-bias effect in ultra-thin-body (UTB) hetero-channel III–V-on-insulator ...This effect results from the discrepancies in elec- tron affinity and ... See full document
3
Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs
... impact of MOSFET layout-dependent stress on high-frequency performance and flicker noise has been investi- ...gated. The proposed donut MOSFETs demonstrate the advan- tages over ... See full document
7
Effect of atomic geometry on shot noise in aluminum quantum point contacts
... Unlike the -like interactions between these base atoms in the symmetric structure ...panel兲, the right base in the asymmetric structure mainly interacts with the central ... See full document
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