[PDF] Top 20 Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon
Has 10000 "Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon" found on our website. Below are the top 20 most common "Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon".
Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon
... For large applied voltages, the emission shifts to longer wavelengths and becomes voltage-dependent MOS structures fabricated on both p-type and n-type silicon exhibit electroluminescenc[r] ... See full document
9
Infrared electroluminescence from metal-oxide-semiconductor structures on silicon
... spectrum from 1200 nm to beyond 1300 nm with increasing applied voltages for MOS on n-type ...the oxide, implying that the interfacial states are probably not ...MOS on n-type Si, on ... See full document
7
Model for Band-Edge Electroluminescence from Metal-Oxide-Semiconductor Silicon Tunneling Diodes
... Because of the indirect-band gap nature of crystalline Si, a phonon is required to provide the additional momentum for radiative recombination. At low temperature, the observed photoluminescence 共PL兲 spectra from ... See full document
5
Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
... holes from the valence band edge into the electron valleys or to carry electrons from electron valley into the valence band edge during the light ...measured from the edge of the Al gate electrode ... See full document
3
Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes
... The excellent match ofthe calculated spectrum to the measured data ofEL spectra shows that the exciton radiative recombination and the participation of optical phonon take place in the r[r] ... See full document
8
Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes
... creases from 2845 to 3075 K as the bias increases from ...of tunneling electrons can produce secondary hot carriers with higher en- ergy, and thus leads to higher carrier ...The tunneling hole ... See full document
3
Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
... band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) ...this electroluminescence is studied and the emission ... See full document
3
Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation
... ⬃⫺3 V are very similar, and the difference in the integral intensity is about 6%. However, the interesting feature is that after stress, the emission intensity becomes stronger than the initial intensity. The origin of ... See full document
3
Room-Temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes
... I 共h 兲⫽I 0 冕 0 h ⫺E g,EL dED e 共E兲D h 共h ⫺E g,EL ⫺E兲f共E,F e ,T 兲f 共h ⫺E g,EL ⫺E,F h ,T 兲, where D e and D h are the densities of states of electron and hole, respectively, F e and F h are the respective ... See full document
3
Electroluminescence from metal/oxide/strained-Si tunneling diodes
... Strained Si attracts a great attention recently due to the enhancement of carrier mobility. The substrate strain tech- nology using the lattice misfit between Si and SiGe can yield global biaxial strain, 1,2 but the high ... See full document
3
Temperature dependence of the electron–hole-plasma electroluminescence from metal–oxide–silicon tunneling diodes
... radius. At 98 K, the transition density is ⬃1⫻10 17 cm ⫺3 , while the carrier density estimated from the quasi-Fermi hole energy at 98 K in Table I is ⬃2⫻10 18 cm ⫺3 . Therefore, free excitons cannot be observed ... See full document
3
Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method
... of electroluminescence (EL) at Si bandgap energy is discovered from metal-oxide–semiconductor tunneling diode on p-type Si with oxide grown by liquid-phase ... See full document
4
Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes
... obtained from the least squares fitting to the data points of EL falling edges in ...turned on 共rising edge 兲, the MOS tunneling diode is still near the flatband condition and the position of Fermi ... See full document
7
Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes
... the silicon wafer has a high crystal qual- ity that results in a carrier lifetime as high as several milli- ...The tunneling current den- sity to the valence band J pt consists of the recombination current ... See full document
9
Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes
... of metal–oxide–semiconductor field-effect transistors 共MOSFETs兲 are scaled down to the deep submicrometer level in state-of-the-art ultralarge-scale integration 共ULSI兲 circuits, the thickness of the ... See full document
3
Nanoparticle-modified metal-oxide-silicon structure enhancing silicon band-edge electroluminescence to near-lasing action
... Al metal comes very close to the Si surface, which makes the structure similar to a metal– insulator – silicon ...tra from MOS upon Si without nanoparticles, 20,21 indicating that ... See full document
3
Electroluminescence at Si band gap energy based on metal–oxide–silicon structures
... important semiconductor material for the integrated-circuit ...of silicon in areas of optics and ...converting silicon to a light-emitting material or causing luminescence on sili- con ... See full document
3
Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures
... emitted from the Si side of the Al/SiO 2 /Si MOS was also ...Al metal at the Si side was first lapped off and then redeposited, but not di- rectly under the MOS ...emitted from the Si side was not ... See full document
4
Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
... range from 650 nm to 850 nm is contributed by dense nc-Si in the SiO x ...that from SiO x sample which was contained 46 at % of excess Si, annealed at 1100 o C for 1h discussed by Iacona et ...the ... See full document
8
On-off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors
... stack metal-oxide-semiconductor field-effect transistors 共MOSFETs兲, the edge direct tunneling 共EDT兲 of electrons or holes from polysilicon to underlying silicon diffusion region ... See full document
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