[PDF] Top 20 Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistors
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Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistors
... LDMOS transistors, the f T is also affected by drain ...effect of drain resistance, the temperature-induced f T variation is almost proportional to the g m ...the temperature dependence ... See full document
7
Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors
... stress effects on the high-frequency performance characteristics of laterally diffused metal–oxide–semiconductor (LDMOS) transistors were ... See full document
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Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 mu m n-type lateral diffused metal-oxide-semiconductor transistors
... function of stress time for devices stressed under V ds = ...Most of the damage is located in L acc and L sp re- ...共under high V ds and high V gs 兲 lead to serious I dlin ...gs ... See full document
3
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
... Recently, high electron mobility transistors 共HEMTs兲 have been applied widely in high-performance microwave and power ...Because metal-semiconductor 共MS兲-based struc- tures are widely ... See full document
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Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC Substrate
... DC characteristics and radio frequency (RF) power performance improvement as high as ...6.6% of asymmetric lightly doped drain metal–oxide–semiconductor ... See full document
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Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
... down of metal-oxide semiconductor field-effect transistors (MOSFETs), conventional SiO 2 -based dielectric is only a few atomic layers thick, causing gate cur- rent to rise, power ... See full document
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Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
... gate oxide size drawn was 10 ⫻10 m 2 , and the physical oxide thickness was ...voltage of 5.5 V was adopted to stress gate oxide, with source, drain, and substrate tied to ...The ... See full document
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Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors
... 10.1063/1.2947588兴 Lateral diffused metal-oxide-semiconductor 共LDMOS兲 transistors have been widely used in many integrated smart- power applications because of their ... See full document
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The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
... The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors View the table of contents for this issue, or go to the ... See full document
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Surface Treatments on the Characteristics of Metal-Oxide Semiconductor Capacitors
... shift of approximately 0.2 eV was observed toward the high binding energy in a sample treated with treatment 3, compared with samples treated with the other ...type of shift is assumed to have been ... See full document
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Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors
... extended metal-oxide-semiconductor 共DEMOS兲 transistors fabricated with thick gate oxide is generally used in display drivers to reduce circuit complication and chip ...state high ... See full document
3
High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method
... view of the key issue of the excellent properties of SiO 2 and SiO 2 /Si interfaces, which are directly grown on Si-based structures using thermal oxidization or wet oxidization method, the ... See full document
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Effects of Plasma Damage on Metal-insulator-Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor Technology
... the oxide leakage current 13) or oxide breakdown voltage 14) as demonstrated in the above ...occurrence of additional gate oxide leakage indicates that additional current paths have been ... See full document
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Temperature dependence of high frequency noise behaviors for RF MOSFETs
... the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect tran- sistors’ intrinsic noise currents, including the induced gate noise ... See full document
3
Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor
... larger RF output power is still obtained in the asymmetric-LDD ...larger RF voltage swing. The higher RF power density of the asymmetric-LDD MOSFET is espe- cially important for Si-based power ... See full document
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Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate
... I–V characteristics of ZGO MOSFET measured at RT. in steps of 2 V, while the V DS was swept from 0 to 40 V at ...slope of ZGO MOSFET were calculated about ...characteristic of ... See full document
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THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS
... Hence, a new method considering the physical properties inherent in a heavily-doped semiconductor is developed to explain the deviation of the experimental specific[r] ... See full document
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Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks
... depth of bulk trap from the high-k conduc- tion ...offset of IL, EOT IL is the equivalent oxide thickness of IL, and IL is the electric field in ...inset of Fig. 4 shows the ... See full document
3
Temperature-dependent capacitance characteristics of RF LDMOS transistors with different layout structures
... behaviors of RF LDMOS transistors with different temperatures were ...the temperature coefficients of C GS + C GB are positive, while the temperature coefficients of C GD ... See full document
4
Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
... finement effects, as shown in Fig. 2. Because of less chance to be scattered to the second subband, inversion holes have a larger mobility owing to a smaller intersubband scattering ...rate. On the ... See full document
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