[PDF] Top 20 Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
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Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
... the memory window is not closure obviously and the memory window can remain a ...novel poly-Si TFT combined with nonvolatile SONOS memory ... See full document
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Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
... compared with channel hot electron injection scheme. 4 However, this type of SONOS memory still has several issues on performance, such as insufficient programing/erasing 共P/E兲 efficiency ... See full document
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A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory
... feasibility of a novel poly-Si TFT that functions as both transistor and nonvolatile SONOS ...NW SONOS- TFT has the better electrical characteristics ... See full document
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Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices
... mechanisms of IDG poly-Si NW SONOS devices are ...the memory window is larger and independent of the bias applied to the control gate as the gate of the charge ... See full document
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A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization
... RC-ELC poly-Si TFTs have been utilized to demonstrate the SONOS memory with excellent electric ...mobility of 403 cm 2 /V · s and a steep subthreshold slope of ... See full document
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Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer
... shortage of holes in the a-IGZO active channel results in very slow F–N erasing ...electrons of IGZO charge-trapping layer are trapped under the conduction band at the programmed state, which also explains ... See full document
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Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation
... -Gate) poly-Si thin-film-transistor (TFT) silicon–oxide–nitride–oxide–sil- icon (SONOS) nonvolatile memory devices fabricated with a simple process have been proposed for ... See full document
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Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications
... NW Si– oxide–nitride–oxide–Si (SONOS) devices have recently been demonstrated as a good candidate for high-density nonvolatile memory applications [8], ...ratio of the NW ... See full document
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Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
... mobility and driving current. 1,2 In addition, the further improvement of poly-Si TFT performances can enable various functional devices, such as memory and controller, to ... See full document
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A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels
... low-cost, and self-aligned spacer technique to fabricate the poly-Si TFTs with NW chan- nels in this ...proposed poly-Si NW TFT has excellent gate controllability due to ... See full document
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Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
... GATE-ALL-AROUND POLY-Si TFTs WITH SINGLE-CRYSTAL-LIKE NANOWIRE CHANNELS 1241 extracted at V DS = ...V, and the maximum on-current (I on ), the minimum off-current (I off ), ... See full document
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Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN-Alumina-Nitride-Vacuum-Silicon Structure
... on poly-Si-TFT mem- ...novel poly-Si-TFT-based TiN–alumina–nitride–vacuum–silicon (TANVAS) memory de- vice with field-enhanced nanowire ...tunneling ... See full document
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A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
... 2,4* and Tiao-Yuan Huang 2 Abstract In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n + -poly-Si nanowire [NW] structure featuring a ... See full document
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Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices
... HARACTERISTICS OF P OLY -Si NW-SONOS D EVICES ...transfer characteristics of the three types of NW-SONOS devices stated in Section ...length of 0.4 µm and ... See full document
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Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
... 21 and 23 nm, respectively. Fig. 4. Measured NW width and thickness as a function of the overetch ...sidewall of a gate after plasma etching. In this example, the NW thickness and width ... See full document
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Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
... corners of the NW channel owing to the fact that most of the trapping sites are ...distributions of poly-Si NW devices along the edge through the two sharp corners (along the XY ... See full document
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Characteristics of poly-Si nanowire transistors with multiple-gate configurations
... Figure 4 shows the ability of the device in modulating the threshold voltage by the bias ranging form -3 to 3 V applying to the top gate. In the[r] ... See full document
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A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
... inverter with poly-Si nanowire channels is proposed and demon- strated in this ...formation of the source and drain of both p-channel and n-channel ... See full document
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Novel gate-all-around poly-Si TFTs with multiple nanowire channels
... Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels Ta-Chuan Liao, Student Member, IEEE, Shih-Wei Tu, Ming ...Tai, and Huang-Chung Cheng, Member, ... See full document
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High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels
... High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels Chia-Wen Chang, Student Member, IEEE, Szu-Fen Chen, Che-Lun Chang, Chih-Kang Deng, Jiun-Jia ... See full document
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