[PDF] Top 20 Characteristics of the Fluorinated High-k Inter-Poly Dielectrics
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Characteristics of the Fluorinated High-k Inter-Poly Dielectrics
... analyzer. The extracted k-value of the Al 2 O 3 and HfO 2 IPDs was listed in Table ...plots the leakage current density at a relatively low electric field (3 MV/cm) for the ... See full document
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Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
... reliabilities. The incorporation of fluorine within the high-k dielectrics is helpful to replace low-k oxygen vacancies (vacuum) and results in thinner equivalent oxide ... See full document
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Thickness scaling and reliability comparison for the inter-poly high-kappa dielectrics
... On the other hand, despite the fact that the RS-Al 2 O 3 IPD can tolerate higher Q BD than the ONO IPD, the maximum Q BD observed is only ∼1 C/cm 2 , which may present a major limita- ... See full document
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The characteristics of the high-K Er2O3 (erbium oxide) dielectrics deposited on polycrystalline silicon
... improve the high-kEr 2 O 3 layer as inter- dielectrics deposited on polycrystalline ...monitor the annealing effects on the dielectrics, multiple material analysis, ... See full document
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High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment
... On the other hand, the shifted C-V curves are not parallel at inter- mediate and low ...degradation of C-V curves in depletion region can be observed as indicated in ...result, the ... See full document
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The influences of moisture and fluorine on the characteristics of fluorinated silicate glass for copper metallization
... 2006 The Electrochemical ...As the dimensions of the integrated circuits 共ICs兲 are scaled down continuously, the interconnect resistance–capacitance 共RC兲 time delay has become ... See full document
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High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
... presents the typical – characteristics of the 13- and 43-nm laminate MIM ...our inter- ested 13-nm laminate MIM capacitor, the leakage current is ...in the case of ... See full document
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Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
... Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis ...Institute of Physics. 关DOI: 10.1063/1.1944230兴 An equivalent oxide thickness of less ... See full document
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High Sensitivity of Dry-Type Nanowire Sensors With High-k Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Technique
... dry-type poly-Si nanowire pH sensors with various high-k dielectrics have been demonstrated to enhance the sensing performance by means of the C-AFM tip coating ... See full document
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High-performance poly(3-hexylthiophene) transistors with thermally cured and photo-cured PVP gate dielectrics
... energy) of the formulations loaded with various amounts of PAG (from 0 to ...wt%). The P3HT-OFETs with the thermally cured PVP gate dielectrics exhibited an excellent carrier ... See full document
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High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
... Impacts of nitridation on poly-1 and densification of TEOS in N O are evaluated by the measurement of current–voltage ( – ) and breakdown ...measurement, the poly-2 is ... See full document
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RF noise characteristics of high-k AlTiOx and Al2O3 gate dielectrics
... spite of the fast progress and good achievement in high-k gate dielectric, 1-4 there is no rf performance of high-k gate dielectric reported so ...one of the ... See full document
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Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
... estimated the intrinsic bulk dielectrics constant for CoTiO 3 under the same ...processes. The intrinsic bulk dielectric constant was estimated as high as 50, excluding the ... See full document
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Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
... during the sput- tering process and later high-temperature oxide step, a 10 Å Si 3 N 4 film was grown by NH 3 共flow rate 105 sccm, pressure 500 mTorr 兲 nitridation of the Si substrate in a low ... See full document
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Fabrication of SONOS-type flash memory with the binary high-k dielectrics by the sol-gel spin coating method
... 2007 The Electrochemical ...2 The storage charge leaks easily due to defects in the tunnel- ing oxide formed by repeated program-erase ...3-7 The charge trapping layer of traditional ... See full document
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High-density RF MIM capacitors using high-k La2O3 dielectrics
... current characteristics.—Figure 1 plots the leakage current density ...(J-V) characteristics of La 2 O 3 MIM ca- pacitors. The leakage current falls rapidly as the thickness ... See full document
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High voltage characteristics of junctionless poly-silicon thin film transistors
... However, the situation only hap- pens at turned-on state or floating-gate voltage state, in which the current flows from source to drain through the whole cross-section of silicon film and ... See full document
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Smart dielectrics of fluorinated silicon glass prepared by liquid phase deposition method
... In addition, we will introduce selective liquid-phase deposition (S-LPD) technology, and its applications to degradation- free damascene trenches for low-K Methylsilsesquioxane (MSQ), an[r] ... See full document
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RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
... In sharp contrast, the A1203 MIM capacitor has good integrity of low DC leakage current, small capacitance reduction, low loss tangent, and high reliability that can [r] ... See full document
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Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substrates
... 2006 The Electrochemical ...2006. The rapid advancement of complementary metal oxide semicon- ductor 共MOS兲 integrated circuit technologies during the past few decades has forced the ... See full document
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