[PDF] Top 20 Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes
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Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes
... The normal stress acting on the abrasive particles against the samples originates from the pressure imposed by the polish arm while the shear stress arises from the slurry flow across th[r] ... See full document
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A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
... wafer, removal rates were meas- ured at 49 points evenly across the ...determination of both NUV and WIWNU. The NUV and WIWNU thus calculated are plotted against pad rpm in ...conditions ... See full document
8
Modeling of the wear mechanism during chemical-mechanical polishing
... This model concerns the effects of applied pressure and relative velocity between the pad and the wafer on the removal rate during polishing and is capable of delineating the role of the[r] ... See full document
6
Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry
... results of Al in the testing slurry, at a contact pressure of 5 psi and at various platen-rotating speeds, are given in Table IV and displayed in ...form of Bode ...ing ... See full document
6
Robust operation of copper chemical mechanical polishing
... Dishing of copper lines is one of the most important issues in Cu ...thickness of the copper lines and degrades the planarity of the wafer ...the pressure or speed leads ... See full document
15
The removal selectivity of titanium and aluminum in chemical mechanical planarization
... Al and Ti are reactive metals that owe their corrosion resistance to a thin, protective, barrier oxide surface layer which is stable in air and in most aqueous ...material re- moval during the ... See full document
5
Effects of film stress on the chemical mechanical polishing process
... b and Jyh-Hwa Chin b a Department of Materials Science and Engineering, National Cheng-Kung Univeristy, Tainan 701, Taiwan b Department of Mechanical Engineering, National Chiao-Tung ... See full document
8
Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads
... Results and discussion The numerical calculation flow chart is shown in ...force and moment equations were used to solve for the minimum slurry film thickness, spinning angle ϕ, and attack angle as ... See full document
9
Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
... repeated processes of passive film formation, removal and repassivation of passive ...the removal rate depends on the formation and abrasion of the passive ... See full document
7
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
... Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan Received 25 June 2002; received in revised form 12 May 2003; accepted 28 May 2003 Abstract In situ ... See full document
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Effects of (002) beta-Ta barrier on copper chemical mechanical polishing behavior
... increase of pressure raises temperature between slurry and copper surface to naturally speed up etching and passivation layer CuO x forma- ...etching rate and porous CuO x ... See full document
4
Effect of oxidizer on the galvanic behavior of Cu/Ta coupling during chemical mechanical polishing
... requirement of global planarization, chemical me- chanical polishing 共CMP兲 has emerged as a critical technique in Cu metallization ...scratch and pit formations, ...forms of corrosion ... See full document
6
Post cleaning of chemical mechanical polishing process
... (ii) As the wafer is transported to a tank with an alkali solution, the fresh surface gradually disappears and a negative charge (negative zeta potential) is built up [r] ... See full document
4
Multivariable control of multi-zone chemical mechanical polishing
... First, a simple ratio control is designed based on the pseudo- inverse of the process model and, provided with the initial surface profile, the input pressures are com[r] ... See full document
4
Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
... ']'he effects of as-depo;ited (intrinsic) stress, externally applied (extrinsic) stresses, hardness, and modules of various dielectric films on chemica]-machanical polishing (CMP) re[r] ... See full document
6
Application of soft landing to the process control of chemical mechanical polishing
... landing of a spacecraft and the CMP operation is ...problem and the well-known bang-bang control law is ...explored and the trajectory is modified ...results of thickness measurement ... See full document
12
Chemical mechanical polishing of PSG and BPSG dielectric films: The effect of phosphorus and boron concentration
... (in Fig. 3), boron seems to be the more important dopant which affects the polishing rate for BPSG films, hence, an increase of boron concentration leads to highe[r] ... See full document
5
Localized corrosion effects and modifications of acidic and alkaline slurries on copper chemical mechanical polishing
... results of NH 4 OH slurries, listed in Table 2, indicate that all of the removal rates and corrosion rates in NH 4 OH slurries are lower than those in HNO 3 slurries owing to the formation ... See full document
16
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
... include re- agents to increase the solubility of the copper in the slurry and to prevent dissolution of the copper in the recess regions on the ...nature of the passivation layer ... See full document
6
Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
... Department of Submicron Technology Development, ERSO/ITRI, Hsinchu, Taiwan Abstract Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing alumina abrasive ... See full document
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