[PDF] Top 20 Infrared electroluminescence from metal-oxide-semiconductor structures on silicon
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Infrared electroluminescence from metal-oxide-semiconductor structures on silicon
... temperature electroluminescence from metal-oxide–semiconductor structures on silicon is ...thin oxide is grown by rapid thermal oxidation. With the ... See full document
7
Electroluminescence at Si band gap energy based on metal–oxide–silicon structures
... Room-temperature electroluminescence corresponding to Si band gap energy from metal–oxide– semiconductor structures on both p-type and n-type Si is ...thin oxide ... See full document
3
Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures
... INTRODUCTION Silicon is the most useful semiconductor material for the integrated-circuit 共IC兲 industry, but its applications in areas of optics and optoelectronics are ...verting silicon to a ... See full document
4
Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy
... based on the literature ...of silicon oxide at the lower inter- face during high-temperature annealing, which has been clearly detected by the transmission electron microscope 共TEM兲 ...observed ... See full document
4
Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon
... For large applied voltages, the emission shifts to longer wavelengths and becomes voltage-dependent MOS structures fabricated on both p-type and n-type silicon exhibit electroluminescenc[r] ... See full document
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Model for Band-Edge Electroluminescence from Metal-Oxide-Semiconductor Silicon Tunneling Diodes
... Because of the indirect-band gap nature of crystalline Si, a phonon is required to provide the additional momentum for radiative recombination. At low temperature, the observed photoluminescence 共PL兲 spectra from ... See full document
5
Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
... with oxide grown at different ...with oxide thickness of 2.5 nm has an infrared emission and its line shape can be fitted by an elec- tron-hole plasma (EHP) model [5], while little electrolumines- ... See full document
3
Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method
... of electroluminescence (EL) at Si bandgap energy is discovered from metal-oxide–semiconductor tunneling diode on p-type Si with oxide grown by liquid-phase deposition ... See full document
4
Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes
... comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence ...sources on Si, and the ... See full document
3
Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector
... different from their bulk counterpart. Although silicon belongs to an indirect bandgap semiconductor, nc-Si embed- ded in SiO 2 exhibit visible photoluminescence with high ...a ... See full document
4
Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
... range from 650 nm to 850 nm is contributed by dense nc-Si in the SiO x ...that from SiO x sample which was contained 46 at % of excess Si, annealed at 1100 o C for 1h discussed by Iacona et ... See full document
8
Nanoparticle-modified metal-oxide-silicon structure enhancing silicon band-edge electroluminescence to near-lasing action
... Al metal comes very close to the Si surface, which makes the structure similar to a metal– insulator – silicon ...tra from MOS upon Si without nanoparticles, 20,21 indicating that similar ... See full document
3
Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
... observed from the germanium nanocrystals 共nc-Ge兲-embedded samples, as well as the reference sample of a pure MS template 12 but with a much lower intensity, indicating that the emission was weakly linked to the ... See full document
4
Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact
... converting silicon to a light-emitting mate- rial or causing luminescence on silicon ...polymer on Si substrates, 10 growth of GaN on Si substrates, 11,12 ... See full document
3
Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
... subband structures for two-dimensional holes in Si- and Ge- channel DG-pMOSFETs are calculated self-consistently from the coupled Poisson and Schrödinger equations with a six-band Luttinger–Kohn Hamiltonian ... See full document
4
Electroluminescence at Si Bandgap Energy from Metal-Oxide-Semiconductor Tunneling Diodes
... The excellent match ofthe calculated spectrum to the measured data ofEL spectra shows that the exciton radiative recombination and the participation of optical phonon take place in the r[r] ... See full document
8
Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
... band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) ...this electroluminescence is studied and the emission intensity ... See full document
3
Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation
... ⬃⫺3 V are very similar, and the difference in the integral intensity is about 6%. However, the interesting feature is that after stress, the emission intensity becomes stronger than the initial intensity. The origin of ... See full document
3
Room-Temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes
... I 共h 兲⫽I 0 冕 0 h ⫺E g,EL dED e 共E兲D h 共h ⫺E g,EL ⫺E兲f共E,F e ,T 兲f 共h ⫺E g,EL ⫺E,F h ,T 兲, where D e and D h are the densities of states of electron and hole, respectively, F e and F h are the respective ... See full document
3
Nanostructured metal-oxide semiconductor devices for efficient band-edge electroluminescence
... The SEM photo (field-emission type) ofthe spun-on 5i02 nanoparticles is shown in Fig. The spun-on 5i02 nanoparticles form an insulation layer with grainy structures with a feature size o[r] ... See full document
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