[PDF] Top 20 Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs
Has 10000 "Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs" found on our website. Below are the top 20 most common "Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs".
Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs
... MOSFET layout-dependent stress on high-frequency performance and flicker noise has been investi- ...proposed donut MOSFETs demonstrate the ... See full document
7
The Impact of MOSFET Layout Dependent Stress on High Frequency Characteristics and Flicker Noise
... —Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been ...investigated. Donut ... See full document
4
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
... for high-frequency characterization and ac parameter ...pads and interconnection lines, and short de-embedding was done to eliminate the parasitic resistances and inductances ... See full document
9
Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs
... Narrow-Width Effect on RF Noise in Multifinger nMOS and pMOS The proliferated impact from layout-dependent stress, para- sitic capacitances, and, most ... See full document
8
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
... Chen, and Guo-Wei Huang, Member, IEEE Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on- insulator ... See full document
6
A New Method for Layout-Dependent Parasitic Capacitance Analysis and Effective Mobility Extraction in Nanoscale Multifinger MOSFETs
... F in which intercept β is contributed from two terms: one is intrinsic gate capacitance C gg,int W tot , and the other is C of W tot ...riers and channel current I DS and can be extracted from ... See full document
9
Low noise and high gain RF MOSFETs on plastic substrates
... 2 SNDL, Dept. of Electrical & Computer Eng., National University of Singapore, Singapore 119260 * on leave from Nano Science Tech. Center, Univ. System of Taiwan- NCTU albert_achin@hotmail.com 3 National Research ... See full document
4
Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs
... Terms—Flicker noise, Ge outdiffusion, strained-Si, ...strained-Si MOSFETs have made great improvements on dc characteristics [1], ...strain in Si is to utilize the lattice misfit ... See full document
3
Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
... doctoral and postdoctoral research in SOI devices at the Univer- sity of California at ...papers in refereed journals and international conference ...research in- terests include ... See full document
7
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
... ERSO/ITRI and working on the process simulation and device design for high-speed SRAM ...engaged in the high-density and low-power Flash memory technology development ... See full document
5
Temperature dependence of high frequency noise behaviors for RF MOSFETs
... radio frequency (RF) metal oxide semiconductor field effect tran- sistors’ intrinsic noise currents, including the induced gate noise current ( ), channel noise current ( ) and ... See full document
3
Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
... degrees in electronics engineering from the National Chiao Tung University Hsinchu, Taiwan, in 2003 and 2007, ...working on radio- frequency (RF)-related ...mixed-mode and RF ... See full document
6
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
... voltages, and substrate biases si- multaneously matched with the nMOSFET subthreshold I–V ...with and without VIDAESM were performed and ...with and without VIDAESM. In the absence of ... See full document
9
Effect of layout on electromigration characteristics in copper dual damascene interconnects
... considered in evaluating the EM reliability in 40 nm and below ...dummy layout effects electromigration In a local dummy layout, the low-k dielectrics etching micro loading ... See full document
5
DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit
... baseband and high-frequency properties of silicon-based nanowire FET devices as active ...components. In design of silicon nanowire FETs, taking the nanowire’s radius and channel length ... See full document
9
A compact RF CMOS modeling for accurate high-frequency noise simulation in sub-100-nm MOSFETs
... thermal noise model is ...fluctuation effect, and parasitic-resistance-induced excess noises were implemented in analytical formulas to accurately simulate RF noises in sub-100-nm ... See full document
5
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
... A and B are decreased from ...role in device ...pinning effect is substantially suppressed and the dependence of Schottky barrier height on metal work function is indeed en- ... See full document
5
On the prediction of geometry-dependent floating-body effect in SOI MOSFETs
... PinSu and Wei Lee Abstract—This brief demonstrates that, through the perspective of body–source built-in potential lowering (1 ), the geometry-dependent floating-body effect in ... See full document
3
Comparison of High-and Low-frequency Transcutaneous Eletrical Nerve Stimulation Effect on Postthoracotomy Pain in Rats in Contralateral and Ipsilateral Side
... coughing and deep breathing, and that may become more difficult for patients to carry out the rehabilitation ...used in thoracotomy, which makes compression and damage intercostal nerves, may ... See full document
2
Comparison of High-and Low-frequency Transcutaneous Eletrical Nerve Stimulation Effect on Postthoracotomy Pain in Rats in Contralateral and Ipsilateral Side
... Background and Purpose: Post-thoracotomy pain is a clinically problem, pain may affect patients' coughing and deep breathing, and that may become more difficult for patients to carry out the ... See full document
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