[PDF] Top 20 The removal selectivity of titanium and aluminum in chemical mechanical planarization
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The removal selectivity of titanium and aluminum in chemical mechanical planarization
... Both the chemical and mechanical interactions should be taken into account simultaneously to elucidate the complicated material removal during ...modeling the CMP process. ... See full document
5
The influence of abrasive particle size in copper chemical mechanical planarization
... kinds of commercial slurries used in Cu ...inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scatter- ...distribution. The complexing agent ... See full document
3
Electrocoagulation for removal of silica nano-particles from chemical-mechanical-planarization wastewater
... concentration in CMP wastewater, which must be properly treated to meet the local discharge ...particles of SiO 2 , Al 2 O 3 , or CeO 2 , depending on the nature of the CMP ... See full document
9
Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
... because the passive film is removed by mechanical force, which includes the down force and rotation speed, upon ...Therefore, the combined effects of the mechanical ... See full document
8
Effects of pad grooves on chemical mechanical planarization
... Effects of Pad Grooves on Chemical Mechanical Planarization Yao-Chen Wang and Tian-Shiang Yang z Department of Mechanical Engineering, National Cheng Kung University, ... See full document
9
Chemical mechanical planarization operation via dynamic programming
... experiment. The parameters for the con- stant removal rate were also found through ...as the admissible input The duration of polishing was 118 s and the removed ... See full document
15
Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
... on the mechanism proposed by Kaufman et al., 1 CMP involves the repeated processes of passive film formation, removal and repassivation of passive ...model, the ... See full document
7
High-selectivity damascene chemical mechanical polishing
... Ideally, the Cu-CMP process should remove the excess Cu from barrier surfaces without losing Cu metals in ...higher removal rate of Cu is required for the phase 1 Cu-CMP to ... See full document
4
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
... that the existence of more Si±H bonds increases the porosity of the PECVD SiN x , leading to increases in both the chemical etch rate and the CMP ... See full document
5
A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
... with the Preston equation is that the definition of V appears vague, since, in an orbital CMP system, the carrier and pad rotate at their respective speeds and the ... See full document
8
Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect
... development of CMP technology, the difference of polishing methods would be applied for copper damascene ...platform. The advantages of these platform would highlighted in ... See full document
6
Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry
... measured, and the results were shown in Fig. 3. The specimen was first prepolarized in the testing slurry at 1500 mV (SCE) for 20 ...When the applied potential was ... See full document
6
Dynamic tuning of chemical-mechanical planarization operation via sliding-mode theory
... [15]. In their research, the removal rate would drift down as the process proceeds because of pad wear- ing and slurry ...Although the problem of pad wearing can be ... See full document
12
Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric
... Consequently, the etchback process has been extensively performed to avoid the problem of ...face planarization is a key technology during the manufacture of multilevel ... See full document
5
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
... 2005 The Electrochemical ...2005. In a damascene chemical mechanical polishing 共CMP兲 process, selective removal of surface passivation on protruded metal film is a critical ... See full document
3
Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
... during the CMP process and are hence considered CMP ...end of line (BEOL) interconnection manufacturing provides the benefits of excellent gap-filling capability and reduced ... See full document
5
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
... during the period. In the periods ranging from 10 to 48 h, the condensation process resulted in a network-like structure through the bulk MSZ ...Next, the water content ... See full document
7
Application of soft landing to the process control of chemical mechanical polishing
... Most of the research work on CMP is focused on detailed removal mechanisms ...(e.g., chemical and / or mechanical factors) and the slurry chemistry ...on the ... See full document
12
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
... exist in terms of developing a fea- sible copper CMP process ...number of slurry chem- istries have been developed for bulk copper CMP, ...3 and H 2 O 2 as oxidants, 1,2 BTA as an inhibitor, ... See full document
6
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
... ) unless CC License in place (see abstract).. Deep-trench isolation structure of polysilicon refill. polishing process, the temperature is elevated due to the friction of the slur[r] ... See full document
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