[PDF] Top 20 Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film

... use of HfO 2 /Al 2 O 3 stacked thin films for RRAM device application by atomic layer ...bulk HfO 2 thin film with the similar thickness was ... See full document

... The resistive switching (RS) behavior of the Ti/Gd 2 O 3 /Pt capacitor structure is fabricated and discussed in this ...The switching characteristics operated under ... See full document

... (HfO 2 ) to ∼9 15 (Al 2 O 3 ). Therefore, the HfO 2 device shows the smallest V F than other Hf x Al y O ...inset of Fig. 2a shows the ... See full document

... Resistance switching memory (RRAM) has attracted an immense interest for non-volatile semiconductor memory technology and applications, 1–7 because it has reversible and reproducible resistive ... See full document

... TiO 2 , 8 HfO 2 , 9 ZrO 2 , 10 Nb 2 O 5 , 11 and Cu x O 12 have also been extensively investigated due to their simple compositions which are easily controlled during ... See full document

... retention of the Ru/RE 2 O 3 /TaN memory devices using Tm 2 O 3 , Yb 2 O 3 , and Lu 2 O 3 thin films under ...Tm 2 ... See full document

... region of on current, which is located in the negative bias region, affects the growth rate of ...HRS of the control sample can be achieved by applying the same stopping voltage, as shown in ... See full document

... Ti/AZTO/HfO 2 /Pt device has excellent resistive switching ...bi-layer resistive switch- ing layer in the form of an AZTO/HfO 2 film for use in RRAM ... See full document

... Fig. 3 shows the XPS spectra of the La 3d core level ...energy of the La 3d core level electron increases with the increase in oxygen pressure from ...to 3.73 Pa; this can be ... See full document

... SiO 2 /Si substrate. After that, 15 nm thick TiO x and 8 nm thick Y 2 O 3 films were deposited using e-gun evapo- ...analyze film bonding, the film samples were pretreated by ... See full document

... excellent characteristics. Among these, the ZnO-based film is one of the most attractive materials for RRAM applications because of its high transparency, reliability and stable ... See full document

... details of the switching mechanisms and the nature of the different resistive states are still under ...nant resistive switching mechanisms have been classified into the ... See full document

... (NVM), resistive random ac- cess memory (RRAM), resistive switching, stabilization, SrZrO 3 ...NTRODUCTION N EXT-GENERATION nonvolatile memories (NVMs), such as ferroelectric random ... See full document

... accuracy of all the information (the “Content”) contained in the publications on our ...purpose of the ...views of the authors, and are not the views of or endorsed by Taylor & ...accuracy ... See full document

... Detailed resistive switching (RS) mechanisms are still arguable and unclear, where material properties and fabrica- tion processes have considerably influence on ...formation/rupture of conducting ... See full document

... influence of top electrode material on the resis- tive switching properties of ZrO 2 -based memory film using Pt as a bottom electrode was investigated in this ...Pt/ZrO 2 /Pt ... See full document

... the thin tunneling oxide may lead to a large leakage current, which causes degradation of the retention ...and resistive random access memory (RRAM) [4], were proposed as suitable candidates for the ... See full document

... temperature of the SBT thin films down to 700 8C with only 1 min ...indicative of perovskite phases in the X-ray ...window of 0.8 V can be achieved at voltage sweep "5 V. The leakage current ... See full document

... PbTiO 3 thin films have been prepared on Si substrates with ultra-thin SiO 2 and Al 2 O 3 buffer layers by chemical solution deposition, ...capacitance–voltage ... See full document

... Ta 2 O 5 deposition is widely used to prevent the growth of an interfacial layer during Ta 2 O 5 depo- sition and ...Techniques of nitridation include rapid thermal annealing ... See full document