[PDF] Top 20 Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
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Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
... novel Schottky barrier silicon-on-insulator metal–oxide–semiconductor field-effect transistor featuring metallic source/drain and an electrical drain junction has ... See full document
5
Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
... gate oxide devices the gate-to-body tunneling cur- rent modulates the body voltage and induces a hysteresis ...gate oxide SBD is only manifested in a noticeable increase in gate leakage current without de- ... See full document
5
Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
... dependent on gate bias, oxide thickness, and any other parasitics, such as inversion layer resistances, altering the observed growth rate ...ultra-thin oxide pMOSFETs, enhanced gate oxide BD ... See full document
6
Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
... multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be ... See full document
8
Ambipolar Schottky-barrier TFTs
... novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and ...a metal field-plate lying on top of the passivation ... See full document
7
Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors
... for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors View the table of contents for this issue, or go to the journal ... See full document
5
Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors
... shown on the inset of ...higher barrier height and larger effective mass can diminish the penetration probability of hole [13], suppress- ing the generation of interface states during ... See full document
9
Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors
... the Schottky barrier height in many semiconductors is relatively insensitive to the metal used be- cause of the pinning of the Fermi surface ...The Schottky barrier height is an ... See full document
5
Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
... Instead of the effective-mass approximation, the valence subband structures for two-dimensional holes in Si- and Ge- channel DG-pMOSFETs are calculated self-consistently from the coupled Poisson and Schrödinger equations ... See full document
4
High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method
... the Schottky gate, the GaN-based metal-semiconductor field-effect transistors 共MES-FETs兲 and MES high-electron mobility transistors 共MES-HEMTs兲 have been successfully used in ... See full document
3
Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector
... Although silicon belongs to an indirect bandgap semiconductor, nc-Si embed- ded in SiO 2 exhibit visible photoluminescence with high ...a metal-oxide-semiconductor 共MOS兲 structure 3 had ... See full document
4
Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain
... asymmetric Schottky-barrier transistor (ASSBT) through using technology computer aided design ...silicided Schottky-barrier (SB) source, with the channel and drain made of heavily n-doped ... See full document
7
Infrared electroluminescence from metal-oxide-semiconductor structures on silicon
... MOS on n-type ...the oxide, implying that the interfacial states are probably not ...MOS on n-type Si, on which emission occurs around E g for metal positively biased at the low voltage ... See full document
7
Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon
... For large applied voltages, the emission shifts to longer wavelengths and becomes voltage-dependent MOS structures fabricated on both p-type and n-type silicon exhibit electroluminescenc[r] ... See full document
9
Effects of Plasma Damage on Metal-insulator-Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor Technology
... the oxide leakage current 13) or oxide breakdown voltage 14) as demonstrated in the above ...gate oxide leakage indicates that additional current paths have been generated within the gate ...the ... See full document
8
1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors
... the insulator from the semiconductor interface, this would cause the carriers to encounter more traps as they tunnel into the ...the insulator correspond to higher time constants and therefore to ... See full document
5
Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate
... Ti/Al/Ti/Au on ZGO without thermal ...Ti metal layer can be ohmic contact with the ZGO. Similar reports on the ohmic contact through Ti/Al/Ti/Au multiple metals were found by Wang et ... See full document
5
The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
... Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors View the table of contents for this issue, or go to the journal homepage for more 1999 ... See full document
4
Schottky barrier height and interfacial state density on oxide-GaAs interface
... the barrier heights and densities of interfacial states of a series of oxide-GaAs struc- ...The oxide-GaAs struc- tures fabricated by in situ molecular beam epitaxy were found to exhibit low ... See full document
6
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
... If the thickness of the semiconductor is larger than the principal width of the space charge layer, the potential distributes as it does in the infinitely thick a-Si:H fi[r] ... See full document
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