[PDF] Top 20 The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
Has 10000 "The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs" found on our website. Below are the top 20 most common "The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs".
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
... and High-Frequency Performance in Nanoscale nMOSFETs Kuo-Liang Yeh, Member, IEEE, and Jyh-Chyurn Guo, Senior Member, IEEE Abstract—The impact ... See full document
9
The Impact of MOSFET Layout Dependent Stress on High Frequency Characteristics and Flicker Noise
... —Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been ...eliminate the ... See full document
4
Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs
... Abstract—The impact of MOSFET layout-dependent stress on high-frequency performance and flicker noise has been investi- ...gated. ... See full document
7
Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs
... than the standard multifinger device W2N32 can achieve 40%/30% lower R g and ...nMOSFET/pMOSFET. The maximum f MAX can reach 366 GHz for 35-nm nMOS and 155 GHz for 37-nm ...with the ... See full document
8
Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
... investigates the low-frequency noise char- acteristics and reports a new mechanism for uniaxial strained ...comparison of the input-referred noise and ... See full document
3
Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
... degrees in electronics engineering from the National Chiao Tung University Hsinchu, Taiwan, in 2003 and 2007, ...with the Advanced Technology Development Division, United Micro- ... See full document
6
Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs
... between the threading disloca- tions and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the ... See full document
3
Low Frequency Noise in Nanoscale pMOSFETs with Strain Induced Mobility Enhancement and Dynamic Body Biases
... increase in G m and I DS can boost gate speed and RF/analog circuit performance in terms of f T and f max ...However, the local strain leads to worse LFN with much ... See full document
4
The investigation of post-annealing-induced defects behavior on 90-nm in halo nMOSFETs with low-frequency noise and charge-pumping measuring
... XPERIMENTS The samples of 90-nm In halo nMOSFET with a 1.2-µm width were prepared by a leading-edge 90-nm CMOS technol- ogy using shallow trench isolation and a retrograde ...oxidation ... See full document
3
The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal-Oxide-Semiconductor Field Effect Transistors under Dynamic Body Biases
... eff and suppressing LFN, without resort to strain engineering. # 2010 The Japan Society of Applied Physics DOI: ...increasing the mobility and driving current, especially useful for ... See full document
8
Noise frequency components and the prevalence of hypertension in workers
... Materials and methods ...employees of a screw-manufacturing plant in Taichung County at the end of ...lifestyle and health examination results, was required to establish ... See full document
8
The effect of high and low frequency electroacupuncture in pain after lower abdominal surgery
... Department of Anesthesiology, National Taiwan University Hospital College of Medicine, National Taiwan University, Taiwan, ROC Received 8 February 2002; accepted 26 June 2002 Abstract In the ... See full document
6
The Dependence of the Performance of Strained NMOSFETs on Channel Width
... worked in the semi- conductor industry in ...with the R&D, Holtek Semiconductor In- ...with the R&D, Winbond Electronics Corporation, and its sub- sidiary company ... See full document
5
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
... Chen, and Guo-Wei Huang, Member, IEEE Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on- ... See full document
6
A New Method for Layout-Dependent Parasitic Capacitance Analysis and Effective Mobility Extraction in Nanoscale Multifinger MOSFETs
... function of N F in which intercept β is contributed from two terms: one is intrinsic gate capacitance C gg,int W tot , and the other is C of W tot .... The former is responsible ... See full document
9
Geometric Variability of Nanoscale Interconnects and Its Impact on the Time-Dependent Breakdown of Cu/Low-k Dielectrics
... (LER) and via-line misalign- ment strongly impact the time-dependent breakdown of the low-k dielectrics used in nanometer IC ...technologies. In this paper, ... See full document
10
High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method
... insulators and in- sulator multilayer stacks were deposited ...9,10 In view of the key issue of the excellent properties of SiO 2 and SiO 2 /Si interfaces, ... See full document
3
Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO
... Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO 2 and ZrO 2 nMOSFETs San Lein Wu 1 , Bo Chin Wang 2 , Yu Ying Lu 1 , Shih Chang Tsai 2 , ... See full document
1
Investigation of Low-Frequency Noise in High-k First/ Metal Gate Last HfO
... Po-Chin HUANG, National Cheng Kung University, Tainan City, Taiwan.. Investigation of Low-Frequency Noise in High-k First/S[r] ... See full document
3
Distinguishing Between STI Stress and Delta Width in Gate Direct Tunneling Current of Narrow n-MOSFETs
... x and π y , respectively, can be created for the drain current ...Although the mobility in near equilibrium may not be the same as that in the saturation regime of ... See full document
3
相關主題