[PDF] Top 20 H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
Has 10000 "H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions" found on our website. Below are the top 20 most common "H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions".
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
... characterized and compared. The effects of channel width on device output char- acteristics for n- and p-channel devices are shown in ...10 and 11, ...pronounced and eventually dis- ... See full document
6
CF4-plasma-induced fluorine passivation effects on poly-Si TFTs with high-kappa Pr2O3 gate dielectric
... 共poly-Si TFTs兲 have received considerable attention in fields such as large-area electronic applications including linear image sensors and active-matrix liquid crystal displays ...of ... See full document
5
Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution
... metal and TEOS oxide on these samples were removed by chemical ...in H 2 SO 4 + H 2 O 2 (3:1) solution at 80°C for 20 minute (H 2 SO 4 -NILC ... See full document
4
Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
... Photonics and Display Institute, National Chiao Tung University, Taiwan d National Nano Device Laboratory, Taiwan This work studied the effects of channel width and NH 3 plasma ... See full document
5
Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si TFTs With Raised Source/Drain
... RSDNW-TFTs with a channel length of ...supply gate voltage, and higher I ON /I OFF ratio than the ...the electrical characteristics of poly-Si TFTs can be ... See full document
3
Improved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layer
... steps and is compatible with MIC ...of poly-Si regions on the wafers were defined by reactive-ion ...tetraethylorthosilicate/O 2 oxide layer was deposited as the gate ... See full document
6
High-performance RSD poly-Si TFTs with a new ONO gate dielectric
... top and bottom oxides of the ONO gate dielectric play very important roles in the reduction of a leakage ...Fig. 3. presents the Weibull plot of TDDB distribution of the TEOS, Si N , ... See full document
7
A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs
... deposited on a thermally oxidized Si wafer by dissociation of SiH gas in a low-pressure chemical vapor deposition (LPCVD) system at 550 ...the poly-Si measured using scanning electron ... See full document
3
Thickness dependence of microstructure of laterally crystallized poly-Si thin films and electrical characteristics of low-temperature poly-Si TFTs
... by plasma-enhanced chemical vapor deposition ...region and etched to expose the seeding windows for Ni ...evaporation and lateral crystallization was carried out subsequently at 500°C for several ... See full document
4
Correlation between electrical characteristics and Oxide/Polysilicon interface morphology for excimer-laser-annealed poly-Si TFTs
... nm) with various energy densities at room temperature in a vacuum ambient ( ⬃10 ⫺3 ...ns and a pulse repetition rate of 20 ...profile on the surface of the irradiated ...substrate with ... See full document
7
CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs
... of on-current under a hot carrier ...V and V GS = 30 V for 4500 s. The variation of on-current was defined as 共I on,stressed − I on,initial 兲/I on,initial ⫻ 100%, where the I ... See full document
4
CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)
... The nitrogen-containing hydrogen (Hz/N,) plasma treatments show better passivation effects on the electrical characteristics of the poly-Si TFTs than the pure H, hy[r] ... See full document
6
Characteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface Treatment
... | and S.S. are reduced significantly while the SiO 2 gate dielectric is replaced by HfO 2 ...Larger gate capacitance density, which is achieved by replacing the SiO 2 gate ... See full document
5
Hydrogen Instability Induced by Postannealing on Poly-Si TFTs
... voltage and mo- bility characteristics comparable to those of the control ...voltage and the subthreshold ...mobility and the minimum leakage current ...the passivation of the dangling bonds ... See full document
3
Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment
... Wu and Chao-Hsin Chien Abstract—In this letter, the effect of CF 4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been ...4 plasma treatment ... See full document
3
THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
... These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiOz/poly-Si interface [r] ... See full document
3
Electrical performance and thermal stability of MIC poly-Si TFTs improved using drive-in nickel induced crystallization
... Compared with MIC process, DIC process can effectively reduce the Ni concentration, thus reducing the Ni-related ...bonds and strain bonds, thus reducing the effects of grain boundaries and channel ... See full document
4
Novel gate-all-around poly-Si TFTs with multiple nanowire channels
... Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels Ta-Chuan Liao, Student Member, IEEE, Shih-Wei Tu, Ming ...Tai, and Huang-Chung Cheng, Member, ... See full document
3
Impacts of N-2 and NH3 Plasma Surface Treatments on High-Performance LTPS-TFT With High-kappa Gate Dielectric
... ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO 2 gate dielectric after N 2 and NH 3 plasma surface treatments, res- ...N 2 and ... See full document
3
Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization
... of poly-Si TFTs using the DILC process had led to the development of a suitable process for AMOLED man- ...etching and subsequently annealed at 590 ◦ C for 3 ...increased with ... See full document
3
相關主題