[PDF] Top 20 GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
... sample A is slower than that of sample B due to the highly resistive LT–GaN layer induced large RC time ...has a large direct band gap energy 共3.41 eV at room temperature 兲 and a ... See full document
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Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
... LT GaN cap layer and the photogenerated carriers will compensate trap levels in LT ...As a result, the photocurrent and responsivity will both become smaller for sample ...near a ... See full document
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Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
... in GaN SBDs and the consequent reduction in the Schottky barrier ...the low barrier height of samples B is attributable to the positively charged surface states as- sociated with ... See full document
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GaN Schottky barrier photodetectors with SiN/GaN nucleation layer
... GaN Schottky barrier photodetectors with SiN / GaN nucleation layer Y. D. Jhou, S. J. Chang, a 兲 Y. K. Su, and Y. Y. Lee Institute of Microelectronics, National ... See full document
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GaN ultraviolet photodetector with a low-temperature AlN cap layer
... 2007. GaN-based materials are useful in short-wavelength emitters such as light-emitting diodes and laser ...共UV兲 photodetectors 共PDs兲. 1,2 For example, GaN-based PDs can be used in space com- ... See full document
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Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
... study, GaN Schottky barrier diodes 共SBDs兲 were grown by organometallic vapor phase epitaxy ...introducing a low-temperature-grown 共LTG兲 GaN layer on top of the ... See full document
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High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes
... the Schottky barrier height at the metal/semiconductor ...achieve a large Schottky barrier height on GaN, one can choose metals with high work functions, such as Pt ... See full document
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Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
... HTG GaN. As stated above, the LTG GaN layers are highly resistive, and so behave like an ...HTG GaN was capped with an LTG GaN layer, TD- related surface pits, which form ... See full document
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Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors
... AIGaN/ GaN hetero- structure field-effect transistors (HFETs) operated at high power and high temperature is widely ...gate layer can be used to achieve these ...2–5 GaN grown at low ... See full document
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Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer
... two GaN p-i-n ...icantly low for the PD with LT-AlN ...PD with LT-AlN interlayer was – ...rapidly with increasing reverse ...samples with an LT-AlN interlayer and ten samples ... See full document
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Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
... combined with the regrowth of AlInGaN or InGaN as the contact ...regrown layer was to reduce the dry etching damage and increase the surface dop- ...p-type GaN contact, such as Schottky ... See full document
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Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
... LTG-GaN cap layer behaves like an insulator with sheet resistivity greater than 10 9 ...fabricate GaN SBDs, a Cl 2 -based plasma etching process was initially performed to expose ... See full document
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High quality GaN-based Schottky barrier diodes
... and a 2.5- m-thick undoped GaN layer ...sample A兲. Samples with conventional low-temperature 共LT兲 GaN buffer were also prepared ...ring with an inner ... See full document
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Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer
... = A * ST 2 exp共− q⌽ B /KT兲exp共qV/nKT兲 ⫻关1 − exp共− qV/KT兲兴, 共6兲 where A * ...共=26.4 A cm −2 K −2 兲 is the effective Richardson constant of GaN, 15 S is the Schottky contact area, T is ... See full document
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Changes in surface state density due to chlorine treatment in GaN Schottky ultraviolet photodetectors
... For GaN-based electronic and optoelectronic devices, high- quality and reliable metal-semiconductor contacts are critical for gaining satisfactory ...However, GaN-based compound semiconductors do contain ... See full document
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Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
... N-SSDTs with DySi 2x silicide were also fabricated using the same simplified one-mask ...produces a rougher surface because the RE silicides are not formed through the layer-by-layer mode, but ... See full document
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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
... e.g. Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have attracted considerable research interest and well recognized as the next generation high power and high ... See full document
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GaN metal-semiconductor-metal ultraviolet photodetectors with Ir/Pt contact electrodes
... metal-semiconductor-metal photodetectors with Ir/Pt and Ni/Au Schottky electrodes were ...effective Schottky barrier height was ...on GaN. It was also found that we could achieve ... See full document
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Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode
... is a technologically important gas used in many industries, such as semiconductor processes, metal- lurgy, chemical processing, and ...gained a lot of attention as a novel source of energy due to its ... See full document
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Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors
... samples with insulating gate layers. From a comparison of the current ramps and the saturation currents of those samples, the different influences of the insulating cap layers become ...Compared ... See full document
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