[PDF] Top 20 Plasma-induced charging damage in ultrathin (3-nm) gate oxides
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Plasma-induced charging damage in ultrathin (3-nm) gate oxides
... years in the Taiwanese Navy and then joined Chung Shan Institute of Science and Technology, Lungtan, for two years, working on missile ...worked in various VLSI areas including memories (DRAM, SRAM, and ... See full document
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Evaluation of plasma charging damage in ultrathin gate oxides
... NO. 3, MARCH 1998 Evaluation of Plasma Charging Damage in Ultrathin Gate Oxides Horng-Chih Lin, Member, IEEE , Chi-Chun Chen, Chao-Hsing Chien, Szu-Kang Hsein, ... See full document
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Improved immunity to plasma damage in ultrathin nitrided oxides
... Abstract—Plasma-induced damage in various 3-nm thick gate oxides ...O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a ... See full document
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Resist-related damage on ultrathin gate oxide during plasma ashing
... of plasma-induced damage on ultrathin oxides during O 2 plasma ashing by metal “antenna” structures with photoresist on top of the ...during plasma ashing, only minor ... See full document
3
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
... on ultrathin oxide ...and gate oxide is more susceptible to charging damage at elevated ...to gate oxide thicker than 7 nm. In this letter, we investigated the aggravated ... See full document
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Plasma charging damage during contact hole etch in high-density plasma etcher
... process induced damage from high-density plasma dielectric etcher was studied ...®eld gate current is the most sensitive parameter to re¯ect the permanent ...damages in the form of ... See full document
8
Reliability of ultrathin gate oxides for ULSI devices
... thinner oxides, it could become a limiting factor for future device ...as gate oxide thickness decreases, sev- eral process integration issues emerge as new chal- ...-poly-Si gate into the thin ... See full document
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Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
... Moreover, severe charging damage due to additional plasma processing required for metal gate process integration also results in significant charge-to- breakdown degradati[r] ... See full document
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The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
... used in our study. In this letter, we hypothesize that this resist-related charging damage is de- termined by the plasma potential adjustment difference between those devices with and ... See full document
3
A novel two-step etching process for reducing plasma-induced oxide damage
... If the antenna structure is used, the incorporated field oxide capacitors will enlarge the gate oxide charging current near the dry-etch endpoint due to charge r[r] ... See full document
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Oxide thickness dependence of plasma charging damage
... samples. In Fig. 5, it is seen that there are basically three types of damage, as rep- resented by types A, B and C, ...place in one sample [12, ...2.5 nm, however, only SB events appear ... See full document
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Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides
... applications in assessing soft-breakdown 共BD兲 statistics as long as the oxide thinning due to the localized physical damage near the SiO 2 /Si interface is accounted ...from ... See full document
4
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
... tunneling gate current accounting for heavy and light hole’s subbands in the quantized inversion layer is built ...relationship in the oxide, experimental reproduction without any parameter ... See full document
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Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
... gate electrode during plasma processing such as polysilicon reactive ion etching (RIE) etch, plasma resist stripping, and plasma etching of aluminum.3- However, little has [r] ... See full document
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Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
... Gate leakage measurements performed on antenna devices show that charging damage can be significantly reduced for fluorine- or nitrogen- implanted devices with 0 2 oxide.. On the[r] ... See full document
4
Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices
... systems. In Section II we review the idea of chain code, moment features and the computation algorithm of ...presented in Section ...region in Section IV. The experiment results are depicted ... See full document
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Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
... Si 3 N 4 film was grown by NH 3 共flow rate 105 sccm, pressure 500 mTorr 兲 nitridation of the Si substrate in a low pressure chemical vapor deposition system at 800 °C for 1 ...deposited in ... See full document
7
Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-kappa/metal gate bulk FinFET devices
... metal gate may introduce random fluctuation source, so- called the work function fluctuation (WKF) owing to the dependency of work function on metal grain’s size, number and ...result in random work function ... See full document
3
Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides
... the gate tunneling current 共J g 兲 on nitrogen profile 共N profile兲 within an ultrathin silicon oxynitride film is ...that gate tunneling current is dependent on N profile, even with equal oxide ... See full document
4
Plasma Nitrogen Oxides Levels in Taxi Drivers and Community Residents
... 1 Institute of Environmental Health, National Taiwan University College of Public. Health, 1 Jen-Ai Road Section 1, Room 1521, Taipei 100, Taiwan[r] ... See full document
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