[PDF] Top 20 Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs
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Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs
... involved in work on PECVD thin-film processing, 256 K/l Mb SRAM process integra- tion and yield improvement, ...interconnect, gate stack, silicide, shallow-trench-isolation, ...publications in ... See full document
6
Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
... from the gate edge (since NLDD quite matches the highly-doped one). This is reasonable since the drain extension beneath the gate is about 8 nm. 6 Comparison of the calcu[r] ... See full document
4
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
... drain leakage and gate ...thinner oxide thicknesses. It is clarified that the gate leakage in practical stand-by mode should be measured per unit gate width, particularly ... See full document
6
Enhanced Hole Gate Direct Tunneling Current in Process-Induced Uniaxial Compressive Stress p-MOSFETs
... Simulated gate current change of zero poly stress with respect to a poly stress of −215 MPa as a function of gate voltage for a channel stress of −215 ...used in this work. In [15], the ... See full document
7
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
... signal, ultrathin oxide MOSFET, valence-band ...applications in the area of mixed-mode and RF ...especially in the low-frequency domain where flicker noise is dominant ...considerations ... See full document
6
On-off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors
... measured in the low voltage ( ⫺1.40 V⬍V G ⬍⫺0.88 V) edge direct tunneling currents in ultrathin gate stack (10 Å oxide ⫹10 Å nitride) n-channel ... See full document
4
Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
... high-k/metal gate stacks. As IL becomes thinner, the CHCS induces additional hole trapping in the high-k dielectric near the drain side, resulting in a DI GIDL trend contrary to those of ... See full document
4
Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning
... HF, MOSFETs, native oxide, silicon (111), ...higher channel mobility of pMOSFETs can be achieved than that fabricated on conventional (100) substrates ...for gate oxide reliabilities ... See full document
3
Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistor
... electrons in- jected into the gate ...-poly gate p-MOSFETs in the stress-induced leakage current mode has evidenced the inelastic trap-assisted tunneling mecha- ... See full document
3
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
... noise in n-MOSFETs with relatively thick gate oxides has been extensively ...on oxide charge tunnel trapping and detrapping has been adopted. 2 As gate oxide thickness is scaled ... See full document
3
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
... the hole direct tunneling gate current accounting for heavy and light hole’s subbands in the quantized inversion layer is built ...density, hole impact frequency on SiO 2 ... See full document
6
Measurement of channel stress using gate direct tunneling current in uniaxially stressed nMOSFETs
... uniaxial channel stress of around 0, −100, and −300 MPa for a gate-to-STI spac- ing of ...reproduce gate direct tunneling current versus gate voltage ...corresponding gate ... See full document
3
Distinguishing Between STI Stress and Delta Width in Gate Direct Tunneling Current of Narrow n-MOSFETs
... mobility in near equilibrium may not be the same as that in the saturation regime of operation, the same piezoresistance coefficients can essen- tially apply to the relative mobility change due to the ... See full document
3
EFFECT OF BACK-GATE BIAS ON TUNNELING LEAKAGE IN A GATED P+-N DIODE
... This work has demonstrated that for a thin-oxide gated p+-n diode, not only back-gate bias dependence but also back-gate bias independence of the tunneling leakage curre[r] ... See full document
3
Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
... IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 2, FEBRUARY 1998 567 the implanted region. At 900 and 1050 C; D it increases steadily with anneal time and at a faster rate at 1200 C : Since all samples were ... See full document
4
GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
... the gate-controlled nt-p diodes with the n + inversion layer induced under the oxide, the gate and substrate hole currents have been shown to be due to the silicon conduc- ti[r] ... See full document
4
Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides
... the gate tunneling current 共J g 兲 on nitrogen profile 共N profile兲 within an ultrathin silicon oxynitride film is ...that gate tunneling current is dependent on N profile, even with ... See full document
4
Anomalous Gate-Edge Leakage Induced by High Tensile Stress in NMOSFET
... high gate tunneling current, induced by high-tensile-stress memorization technique, is reported in this ...increased gate tunneling current is originated from the higher ... See full document
3
A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation
... stacked gate oxide and subsequently to fill in an embedded SiGe channel (ESC) between the gate oxide and the underlying silicon substrate is proposed for the first time to ... See full document
7
STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS
... shows that lateral field enhanced band-trap-band tunneling b primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures wh[r] ... See full document
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