[PDF] Top 20 Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors
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Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors
... Drain extended metal-oxide-semiconductor 共DEMOS兲 transistors fabricated with thick gate oxide is generally used in display drivers to reduce circuit ... See full document
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Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
... metal gate n-MOSFETs remains a major device reliability concern in device ...under hot carrier injection a high lateral electric field in the pinch-off region heats the ... See full document
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Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors
... cost in power applications, high- voltage devices integrated into mature complementary metal- oxide-semiconductor 共CMOS兲 process have attracted much attention ...types of high-voltage ... See full document
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Impact of the strained SiGe source/drain on hot carrier reliability for 45 nm p-type metal-oxide-semiconductor field-effect transistors
... distribution in our p-MOSFET ...damages of the channel located at the drain side ...the gate and the channel 共V g − V sub = −2 V 兲. As a result, most of damages take place at regions I ... See full document
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The impact of gate-to-source tunneling current on the characterization of metal-oxide-semiconductor field-effect transistor's hot-carrier reliability
... ultra-thin gate oxide is used in state-of-the-art complementary metal-oxide-semiconductor field-effect tran- sistor (CMOS) technologies, a new concern arose for when the ... See full document
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Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal-oxide-semiconductor field-effect transistors
... Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan 70101, Republic of China 共Received 13 March 2003; accepted 30 June 2003兲 The ... See full document
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Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 mu m n-type lateral diffused metal-oxide-semiconductor transistors
... fused metal-oxide-semiconductor 共LDMOS兲 transistors are widely used because of the compatibility to be integrated into standard low-voltage complementary MOS 共CMOS兲 ...LDMOS ... See full document
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Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors
... The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal–oxide–semiconductor (LDMOS) transistors were ... See full document
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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
... good reliability but at a sacrifice to ...supported in our ...the drain side) to reduce the electron field, in turn reducing the capability for impact ...reduced hot carrier ... See full document
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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
... studied in this paper based on the high-performance 28-nm CMOS ...the gate first process. For the gate first process devices, 10 A ˚ and 30 A˚ of high quality ther- mal oxide ... See full document
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Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors
... section of the n-type LDMOS tran- sistor used in this letter is shown in ...indicated in the ...The gate oxide thickness and width of the device are 30 nm and 20 m, ... See full document
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Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
... spacing in the semiconductor. The stronger gate–dot coupling strength [12] can also further control the leakage current and thus make the conductance oscillations more ...distinguishable. In ... See full document
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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
... I g -V g transfer curves were measured with the source, drain, and body terminals all grounded with V g given from 0 V to 1.3 V. Then through body floating (BF) and source/drain floating (SDF) process, the ... See full document
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Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
... n-MOSFETs in CMOS circuits. In this work, we therefore focus on the V th shift characteristics during CHCS on p- ...behavior of V th shift is to- ward the positive direction in ... See full document
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Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
... resulting in serious S.S. deg- radation in n-MOSFETs with high-k gate ...degradation in that there is no change after dynamic ...to-band hot hole injection at the drain side ... See full document
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Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
... D in F mode will deplete a portion of interface states in the channel, resulting in a lower degradation of V TH .... In the same way, the high stress V G condition shows no ... See full document
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Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
... positive gate bias in a c-SBD device due to localized effective oxide thinning 14,17,18 while I b in an e-SBD device is nearly ...the drain bias dependence of the ... See full document
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Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
... The hot-carrier reliability of devices with grain bound- aries in the drain junction is further investigated using an- other single TFT-B, which was first stressed in ... See full document
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Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistors
... dependence of f max is also affected by the drain resistance (R d ) and drain–substrate junction capacitance (C jdb ), the variation in f max is approximately ...temperature-coefficient ... See full document
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Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments
... ambiance effects on various reliability issues for InGaZnO thin film tran- sistors with an organic passivation ...layer. Hot-carrier stress and gate-bias stress are carried ... See full document
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