[PDF] Top 20 Light emission and detection by metal oxide silicon tunneling diodes
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Light emission and detection by metal oxide silicon tunneling diodes
... For NMOS diodes, the negative gate voltage will inject electrons from metal to silicon and attract the positive localized holes in the silicodoxide interface (accum[r] ... See full document
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Using SiO<inf>2</inf> nanoparticles to efficiently enhance light emission from metal-oxide-silicon tunneling diodes on Si
... Frequency response uses small signal current as less-deshuctive excitation and permits measurement of carrier lifetime under low level bias condition ( < IOA/cm* ). In [r] ... See full document
4
Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
... phonons and interface roughness for the device biased in the accumulation region is given in ...phonon and interface roughness together can provide the ...the light emission process and ... See full document
3
Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation
... of metal–oxide–silicon 共MOS兲 devices due to current stress has been extensively studied since the early ...interface by hot electrons 2 and the incorporation of deuterium at the ... See full document
3
Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes
... visible light comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence ...viable ... See full document
3
Room-Temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes
... of light emission from the metal– oxide–silicon 共MOS兲 tunneling diodes 2,3 sheds new light on this ...the light emission ...共p-i-n兲 diodes ... See full document
3
Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
... wider, and increases more rapidly as the injection current increases, in comparison with that at the low-energy ...the oxide/Si interface, 7) and does not contribute to the light ... See full document
3
Temperature dependence of the electron–hole-plasma electroluminescence from metal–oxide–silicon tunneling diodes
... of metal–oxide–silicon tunneling light-emitting diodes was ...the emission spectra from room temperature to 98 ...integral emission intensity slightly increases at ... See full document
3
Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes
... of metal–oxide–semiconductor field-effect transistors 共MOSFETs兲 are scaled down to the deep submicrometer level in state-of-the-art ultralarge-scale integration 共ULSI兲 circuits, the thickness of the gate ... See full document
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The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake
... 2 and Ching-Fuh L IN 2 Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, ... See full document
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Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method
... Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, ROC Received 11 September 2001; received in revised form 8 November 2001; accepted 23 December 2001 ... See full document
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Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes
... rising and falling edges are determined to be ...4 and the SRH recombination rate approaches a maximum when the recombination centers are located near the midgap ...edge and the falling edge of EL ... See full document
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Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes
... the light extraction efficiency c by applying an anti- reflection pattern to the Si surface, 4 increase the injection efficiency by reducing the interface states, or increase the recombination ... See full document
9
A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes
... current and photocurrent of an Al/2.3 nm oxide/p-Si tunneling diode at different illumination den- sities, and the device area is cm ...excited by metal halide lamp with a ... See full document
6
Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes
... of light emission of the PMOS tunneling ...region, and then the light is emitted (radiative recom- ...the emission intensity at bandgap energy decreases (non-radiative recombina- ... See full document
4
Model for Band-Edge Electroluminescence from Metal-Oxide-Semiconductor Silicon Tunneling Diodes
... Because of the indirect-band gap nature of crystalline Si, a phonon is required to provide the additional momentum for radiative recombination. At low temperature, the observed photoluminescence 共PL兲 spectra from ... See full document
5
Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
... Here we report that by use of Si@ nanoparticles in the oxide layer in metal-oxide-silicon (MOS) structure and anisotropic wet etching solution KOH to improve the surface quality, t[r] ... See full document
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Correlation between Si–H?D bond desorption and injected electron energy in metal–oxide–silicon tunneling diodes
... scanning tunneling microscopy 共STM兲 experiment on hydrogen passi- vated silicon surface under ultrahigh vacuum conditions 6 in- spired the idea to use deuterium instead of hydrogen in a MOS system, ... See full document
3
Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
... the tunneling holes from Al gate elec- trode to Ge radiatively recombine with the electrons in the accumulation region of ...MIS light emitting diode 共LED兲 at the positive gate bias is shown as the inset of ... See full document
3
Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes
... A. Chin Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan 共Received 14 January 2005; accepted 18 July 2005; published online 6 September 2005兲 In addition to Si band-edge ... See full document
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