[PDF] Top 20 Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

... interface roughness for the device biased in the accumulation region is given in ...Without roughness scattering, phonons with momentum of the exact ...holes from the valence band edge into the ... See full document

... ⬃⫺3 V are very similar, and the difference in the integral intensity is about 6%. However, the interesting feature is that after stress, the emission intensity becomes stronger than the initial intensity. The origin of ... See full document

... creases from 2845 to 3075 K as the bias increases from ...of tunneling electrons can produce secondary hot carriers with higher en- ergy, and thus leads to higher carrier ...PMOS diodes ... See full document

... Because of the indirect-band gap nature of crystalline Si, a phonon is required to provide the additional momentum for radiative recombination. At low temperature, the observed photoluminescence 共PL兲 spectra from ... See full document

... Si/oxide roughness 8 and/or the spread in the reciprocal space 共k space兲 due to the localized wave func- tion of electrons in the accumulation ...different from those of the previous ... See full document

... K from the unstrained/strained MOS LED samples with the device size of 4 ⫻10 −2 cm 2 ...obtained from the fitting of the EL ...K from the relaxed device is reduced by 15 meV under ... See full document

... band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) ...this electroluminescence is studied and the emission ... See full document

... radius. At 98 K, the transition density is ⬃1⫻10 17 cm ⫺3 , while the carrier density estimated from the quasi-Fermi hole energy at 98 K in Table I is ⬃2⫻10 18 cm ⫺3 . Therefore, free excitons cannot be observed ... See full document

... For large applied voltages, the emission shifts to longer wavelengths and becomes voltage-dependent MOS structures fabricated on both p-type and n-type silicon exhibit electroluminescenc[r] ... See full document

... The excellent match ofthe calculated spectrum to the measured data ofEL spectra shows that the exciton radiative recombination and the participation of optical phonon take place in the r[r] ... See full document

... of electroluminescence (EL) at Si bandgap energy is discovered from metal-oxide–semiconductor tunneling diode on p-type Si with oxide grown by liquid-phase deposition ...grown ... See full document

... The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal ...of ... See full document

... obtained from the least squares fitting to the data points of EL falling edges in ...MOS tunneling diode is still near the flatband condition and the position of Fermi level is close to the mid- ...MOS ... See full document

... For NMOS diodes, the negative gate voltage will inject electrons from metal to silicon and attract the positive localized holes in the silicodoxide interface (accum[r] ... See full document

... NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake ...emission from the rough PMOS and NMOS diodes degrade much less than those of ... See full document

... of metal–oxide–semiconductor field-effect transistors 共MOSFETs兲 are scaled down to the deep submicrometer level in state-of-the-art ultralarge-scale integration 共ULSI兲 circuits, the thickness of the gate ... See full document

... the silicon wafer has a high crystal qual- ity that results in a carrier lifetime as high as several milli- ...The tunneling current den- sity to the valence band J pt consists of the recombination current ... See full document

... nm oxide/p-Si diode with an area of cm ...ultrathin oxide device, the tunneling rate is con- trolled by the oxide voltage, which causes the direct tunneling of electrons from ... See full document

... tunnel from gate to the n-Si sub- strate, recombine with the electrons in the accumulation region, and then the light is emitted (radiative recom- ...ultrathin oxide from capacitance–voltage ... See full document

... and electroluminescence of SiGe dots fabricated by island growth,” ...electron–hole–plasma electroluminescence from metal–oxide–silicon tunneling diodes,” ... See full document