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[PDF] Top 20 A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers

Has 10000 "A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers" found on our website. Below are the top 20 most common "A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers".

A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers

A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers

... Fig. 3 Simulated I n,out /I n,M1 with different values of g m3 /g m2 ...C 1 cause impedance to roll off at high frequencies, and have been compensated by series inductor L 0 and shunt inductor ... See full document

4

A Low-Power Self-Forward-Body-Bias CMOS LNA for 3-6.5-GHz UWB Receivers

A Low-Power Self-Forward-Body-Bias CMOS LNA for 3-6.5-GHz UWB Receivers

... AND A NALYSIS The proposed low-power CMOS LNA for ...3-6.5 GHz is shown in ...low noise figure, and the second stage employs the cascode architecture to compensate ... See full document

3

A 3.1 similar to 10.6 GHz CMOS direct-conversion receiver for UWB applications

A 3.1 similar to 10.6 GHz CMOS direct-conversion receiver for UWB applications

... Designing a LNA for UWB applications is a difficult task: the performance requirements of wide bandwidth characters for gain, input matching, high linearity, and minimized flat ... See full document

4

A 3-10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits

A 3-10 GHz CMOS UWB Low-Noise Amplifier With ESD Protection Circuits

... ESD-protected UWB LNA is designed and fabricated using 130 nm CMOS ...technology. A source-follower output buffer and is integrated in the LNA for the purpose of measurement, as ... See full document

3

A low-power CMOS LNA for ultra-wideband wireless receivers

A low-power CMOS LNA for ultra-wideband wireless receivers

... Taiwan a) yiching.cm94g@nctu.edu.tw Abstract: In this paper, a low-power ultra- wideband (UWB) low- noise amplifier (LNA) is ...propose a structure to combine the common gate with ... See full document

6

A 2.4 to 5.4 GHz low power CMOS reconfigurable LNA for multistandard wireless receiver

A 2.4 to 5.4 GHz low power CMOS reconfigurable LNA for multistandard wireless receiver

... good noise figure and ...that a multiple-stage configuration is ...shows a two-stage solution pursued in this ...provides broadband responses of input impedance matching, high voltage gain and ... See full document

4

Parallel-RC Feedback Low-Noise Amplifier for UWB Applications

Parallel-RC Feedback Low-Noise Amplifier for UWB Applications

... Proposed UWB LNA. input filter insertion loss degrades the LNA’s NF, and a large chip area is ...with a source inductance is proposed to obtain the broadband input matching and ... See full document

5

A 5.4-mW LNA using 0.35- /spl mu/m SiGe BiCMOS technology for 3.1-10.6-GHz UWB wireless receivers

A 5.4-mW LNA using 0.35- /spl mu/m SiGe BiCMOS technology for 3.1-10.6-GHz UWB wireless receivers

... However, for low-power UWB system requirement, the power consumption issue makes the conventional distributed amplifier difficult to be integrated into low-power single[r] ... See full document

4

CMOS low-noise amplifier for 6-11 GHz MB-OFDM UWB wireless radio system

CMOS low-noise amplifier for 6-11 GHz MB-OFDM UWB wireless radio system

... In February, 2002, UWB system is approved A sketch of the wideband amplifier which contains input by the Federal Communications Commission (FCC) [1]* matchmg network, main amplifier and [r] ... See full document

4

CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver

CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver

... A notch filter is proposed in dual- presented in this paper because the UWB system uses a wideband low-noise amplifier which is located among very wide bandwidth and there is no specifie[r] ... See full document

4

A 3.1-10.6 GHz CMOS cascaded two-stage distributed amplifier for ultra-wideband application

A 3.1-10.6 GHz CMOS cascaded two-stage distributed amplifier for ultra-wideband application

... The circuit using two-stage cascaded topology achieves better gain-bandwidth product performance than conventional CMOS distributed amplifiers.. The circuit was.[r] ... See full document

4

A 0.6-22-GHz broadband CMOS distributed amplifier

A 0.6-22-GHz broadband CMOS distributed amplifier

... The amplifier was fabricated in a standard 0.18-pm CMOS technology and demonstrated the highest frequency and bandwidth of operation among previously reported amplifiers[r] ... See full document

4

A CMOS 5-GHz micro-power LNA

A CMOS 5-GHz micro-power LNA

... the proposed LNA topology, the bias current of the output stage is limited to achieve the minimum power dissipation.. Therefore, a fundamental restriction is imposed on the Pi[r] ... See full document

4

A 2.17 dB NF, 5 GHz band monolithic CMOS LNA with 10 mW DC power consumption

A 2.17 dB NF, 5 GHz band monolithic CMOS LNA with 10 mW DC power consumption

... Our results unequivocally demonstrate that low noise figures and low power consumptions can be achieved simultaneously with on-chip input and output matching networks [r] ... See full document

4

A 10 similar to 18GHz wide-band transfonner feedback LNA

A 10 similar to 18GHz wide-band transfonner feedback LNA

... A 10~18GHz Wide-band Transformer feedback LNA Pei-Yuan Chiang, Christina.F. Jo u, Hui-I Wu, Zhe-Yang Huang Institute of Communication Engineering, National Chiao Tung University, Hsinchu, ... See full document

4

A CMOS low noise amplifier with RLC-impedance feedback for 3-5GHz ultra-wideband wireless system

A CMOS low noise amplifier with RLC-impedance feedback for 3-5GHz ultra-wideband wireless system

... completely defined, two major proposed solutions, Fig.2 which consists of wideband input impedance MB-OFDM and DS-UWB, are all allowed to matching networks, a cascode amplifier with shun[r] ... See full document

4

A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption

A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption

... IP3 for the LNA on a thin substrate (20 m) with 10-mW power ...ONCLUSIONS A method of designing to a desired value by the selec- tion of transistor device size and ... See full document

12

9-25GHz寬頻CMOS LNA設計

9-25GHz寬頻CMOS LNA設計

... 就多媒体傳輸對頻寬 的 要 求 , 光 纖 的 確 是 能 滿 足 大 部 分 的 需 求 , 只 不 過 , 就 算 是 在 先 進 的 開 發 國 家 , 仍 然 無 法 克 服 ” 最 後 一 英 里 ” 的 障 礙 , 因 為 若 要 把 光 纖 拉 到 每 個 月 戶 家 中 或 是 辦 公 室 , 除 了 工 程 量 龐 大 , 費 用 過 高 外 , 施 工 期 也 很 長 , 這 情 形 在 偏 遠 地 區 就 更 顯 ... See full document

69

ESD protection design for 1-to 10-GHz distributed amplifier in CMOS technology

ESD protection design for 1-to 10-GHz distributed amplifier in CMOS technology

... Fig. 10. Observed in Fig. 10, the turns of the induc- tors were random values between 1 and ...between 1 and ...removed, for the reason that the on-chip inductors could not reach the ... See full document

10

A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

... and m-derived matching sections, the gain bandwidth product of our chip is believed to be the highest among the recent published results reported for a CMOS distruibted ampl[r] ... See full document

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