[PDF] Top 20 Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors
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Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors
... of electron mobility on strain, channel direction, and substrate orientation is theoretically studied for the germanium n-channel metal-oxide-semiconductor ... See full document
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The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
... Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors View the table of contents for this issue, or go to the journal ... See full document
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Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
... the mobility at high vertical surface field, which em- bodies the effective scattering rate in the vicinity of the source, remains ...relevant. In addition, recent reports on ag- gressively ... See full document
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Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
... simultaneous effect on the channel region due to pre-existing traps; 27,28 thus, the cold carrier injection should be eliminated by PBS for better ...hot electron trap- ping mechanism of HCD from ... See full document
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Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation
... CESL strained nMOS- FET with and without fluorine incorporation clearly indicates that improvement of electron mobility from the SiN CESL process does not affect by the CFI ...CESL strained ... See full document
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Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
... larger mobility owing to a smaller intersubband scattering ...rate in- creases due to an increase of an overlap ...finement effect on the overlap integral can be understood from the illustration ... See full document
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The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors
... out-diffusion. In this work, by using the SPE implantation, Si:C in the S/D extension region was ...formed in the S/D region with ...process, in which the latter tends to give longer lateral ... See full document
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Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
... issue in metal-oxide-semiconductor field-effect transistors 共MOSFETs兲 having ultrathin 共⬍5 nm兲 gate ...processes in and around certain SBD percolation paths as the ... See full document
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Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors
... listed in Table ...Gm enhancement ratio increases with decreasing channel length, a feature of uniaxial strain caused by SiN capping ...difference in gate-oxide ... See full document
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The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors
... of strained devices with Si:C source/drain ...low field (subthreshold region), while g m dominates at high field (linear ...carbon in the Si:C struc- ture, it has been able to suppress the ... See full document
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Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
... booster in producing next- generation metal-oxide-semiconductor field-effect transistors ...共i兲 Strained silicon 共SSi兲 on a relaxed SiGe buffer layer; and 共ii兲 ... See full document
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Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
... of metal-oxide semiconductor field-effect transistors (MOSFETs), conventional SiO 2 -based dielectric is only a few atomic layers thick, causing gate cur- rent to rise, power ... See full document
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Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
... narrowing effect induced by the channel strain as well as the increased mobility, both tend to enhance the impact ioniza- tion ...current. Channel length and width of the test devices are ... See full document
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Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
... instability in ultrathin n-channel metal-oxide-semiconductor field-effect transistors with hafnium-based gate ...that electron trapping under dynamic ... See full document
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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
... It has been generally thought that MOSFETs with thicker ILs can obtain good reliability but at a sacrifice to performance. However, the opposite seems supported in our experiment. I D , G m , and SS for the I/O ... See full document
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Efficient mobility enhancement engineering on 65 nm fully silicide complementary metal-oxide-semiconductor field-effect-transistors using second contect etch stop layer process
... (CESL) in nickel fully silicide complementary metal–oxide–semiconductor field-effect-transistors (Ni FUSI CMOSFETs) and investigated performance characteristics, such as driving capacity, ... See full document
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Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors
... Abstract. In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (R ... See full document
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Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
... by channel carrier trapping and detrapping time when capacitance is ...the electron can fill up interface states, because there is insufficient time to allow the trapping electron to drop out from ... See full document
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Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
... results in insignifi- cant impact ionization, also leading less N it, SiO2/HfO2 in device ...Clearly, electron trapping behavior dominates the characteristic of device, including positive V th ... See full document
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Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
... noise in n-MOSFETs with relatively thick gate oxides has been extensively ...on oxide charge tunnel trapping and detrapping has been ...gate oxide thickness is scaled into direct tunneling ... See full document
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