[PDF] Top 20 Hot-carrier effects on power characteristics of SiGeHBTs
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Hot-carrier effects on power characteristics of SiGeHBTs
... degradation of power performance after stress would be even worse, due to the mismatched ...degradation of output power and power ...magnitude of the output waveform to lower ... See full document
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Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
... areas of microelectronics and optoelectronics, including the invention of the method of low-pressure-MOCVD-using tri-ethyl–gallium to fabricate light-emitting diode laser, and microwave transistors, ... See full document
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Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
... Dean of Research (1987–1990), Dean of Engineering (1990–1994), and Dean of Electrical Engineering and Computer Science ...president of National Nano Device Laboratories (NDL) from 1990 through ... See full document
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Impacts of SiN-capping layer on the device characteristics and hot-carrier degradation of nMOSFETs
... B. Short-Channel Effects Fig. 3 shows the threshold-voltage (V th ) roll-off characteris- tics of the devices. The results are obtained at V DS = 0.05 V. Among the three splits of devices, the ... See full document
6
Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors
... section of the n-type DEMOS tran- sistor used in this work is shown in ...location of bird’s beak 共X=0 m兲 is also indicated in the ...fabricated on a ...oxidation of silicon field oxide ... See full document
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Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
... 共AMOLEDs兲 on large area glass ...system on a panel ...electrical characteristics of poly-Si TFTs, such as enlarging the channel grains by laser- induced lateral crystallization 2 and reducing ... See full document
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EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS
... The importance of the position of the interface states to the substrate current characteristics is evaluated through a comparative analysis of the present model and[r] ... See full document
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Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film Transistors
... channel of the transistor, it is desirable to resolve and understand the detailed mechanisms responsible at different portions of the stressed ...the characteristics of poly-Si devices under ... See full document
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Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors
... The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal–oxide–semiconductor (LDMOS) transistors were ...channel ... See full document
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A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET's
... criterion. On the other hand, since interface state generation is the dominant mechanism responsible for the variation of the above characteristics, determination of the interface states, in ... See full document
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Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs
... area of analog integrated cir- cuits. The capability of integrating low-noise analog circuits and high-speed digital circuits on the same chip is crucial to the production of a wide range ... See full document
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Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-kappa gate dielectric
... al.: CHARACTERISTICS OF PBTI AND HOT CARRIER STRESS 173 case, the vertical electric field would be decreased ...bond of the grain boundaries to damage the poly-Si channel film and the ... See full document
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Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations
... simulations of the admittance-voltage properties of Ge and Si MOS devices, including analyses of substrate conductance G sub and high–low transition frequency f tran , to explore the differences in ... See full document
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Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
... In modeling, various drain leakage current mechanisms including drain-to-source subthreshold leakage current, band-to-band tunneling current and interface trap assisted[r] ... See full document
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Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
... the hot-carrier (HC) immunity of the MSB pFinFETs with different gate lengths ( ) and fin widths ( ) are ...less hot carrier degra- dation than that with wider . The effects ... See full document
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Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS
... 3(a) shows a normalized drain current (Id/W) versus Vd in small and large gate width devices in DC (Agilent.. G_ 4156) measurement.[r] ... See full document
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Polymer hot-carrier transistor
... replacement of semiconductor base by metal was proposed in the early ...backscattering of carrier at the base-collector junction is severe as the interface varies ...idea of using C 60 as the ... See full document
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Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells
... role on hot carrier relaxations at a high carrier ...difference of the dynamical screening between the two different dimensions, the calculated results with the HP þ DS in ...deviation ... See full document
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Effects of humic substance characteristics on UF performance
... ratios of UV/DOC as in our cases indicate a high reactivity to form THMs (Krasner et ...those of dier- ent AMW groups and hydrophobic/hydrophilic re- siduals, the data in these tables clearly demonstrate ... See full document
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Effects of Geometrical Characteristics of Surface Roughness on Droplet Wetting
... wettability on a solid ...angle on a textured surface and the liquid-gas contact area within the groove that plays a key ...Depending on the geometrical characteristics of the grooves, ... See full document
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